SOT-89 PNP 300V 0.2A
The versatility of this PNP GP BJT from Technologies makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BFN19E6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BST16TA 美台 | 类似代替 | BFN19E6327HTSA1和BST16TA的区别 |
BFN19H6327XTSA1 英飞凌 | 功能相似 | BFN19E6327HTSA1和BFN19H6327XTSA1的区别 |
BFN19 英飞凌 | 功能相似 | BFN19E6327HTSA1和BFN19的区别 |