BFN19E6327HTSA1

BFN19E6327HTSA1图片1
BFN19E6327HTSA1概述

SOT-89 PNP 300V 0.2A

The versatility of this PNP GP BJT from Technologies makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

BFN19E6327HTSA1中文资料参数规格
技术参数

频率 100 MHz

极性 PNP

耗散功率 1 W

击穿电压集电极-发射极 300 V

集电极最大允许电流 0.2A

工作温度Max 150 ℃

工作温度Min -65 ℃

耗散功率Max 1000 mW

封装参数

安装方式 Surface Mount

引脚数 4

封装 SOT-89

外形尺寸

封装 SOT-89

物理参数

材质 Silicon

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买BFN19E6327HTSA1
型号: BFN19E6327HTSA1
制造商: Infineon 英飞凌
描述:SOT-89 PNP 300V 0.2A
替代型号BFN19E6327HTSA1
型号/品牌 代替类型 替代型号对比

BFN19E6327HTSA1

Infineon 英飞凌

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