BD159G

ON SEMICONDUCTOR  BD159G  Bipolar BJT Single Transistor, NPN, 350 V, 20 W, 500 mA, 30 hFE 新

Plastic Medium Power NPN Silicon Transistor

This device is designed for power output stages for television, radio, phonograph and other consumer product applications.

Features

• Suitable for Transformerless, Line−Operated Equipment

• Thermopad™ Construction Provides High Power Dissipation Rating for High Reliability

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得捷:
TRANS NPN 350V 0.5A TO126

艾睿:
Trans GP BJT NPN 350V 0.5A 20000mW 3-Pin3+Tab TO-225 Box

安富利:
Trans GP BJT NPN 350V 0.5A 3-Pin TO-225 Bulk

Chip1Stop:
Trans GP BJT NPN 350V 0.5A 3-Pin TO-225 Bulk

Verical:
Trans GP BJT NPN 350V 0.5A 20000mW 3-Pin3+Tab TO-225 Box

Newark:
# ON SEMICONDUCTOR  BD159G  TRANSISTOR, BIPOL, NPN, 350V, TO-225-3