晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0066 ohm, 10 V, 2.2 V
BSC079N03LSC G, SP000527424
得捷:
MOSFET N-CH 30V 14A/50A TDSON
立创商城:
N沟道 30V 14A 50A
e络盟:
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0066 ohm, 10 V, 2.2 V
艾睿:
This BSC079N03LSCGATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Chip1Stop:
Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP
Verical:
Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R
Win Source:
MOSFET N-CH 30V 14A 8TDSON
针脚数 8
漏源极电阻 0.0066 Ω
极性 N-CH
耗散功率 2.5 W
阈值电压 2.2 V
漏源极电压Vds 30 V
连续漏极电流Ids 14A
上升时间 2.4 ns
输入电容Ciss 1600pF @15VVds
下降时间 2.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta, 30W Tc
安装方式 Surface Mount
引脚数 8
封装 PG-TDSON-8
封装 PG-TDSON-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Lead Free