BD680AG

ON SEMICONDUCTOR  BD680AG.  单晶体管 双极, 达林顿, PNP, 80 V, 1 MHz, 40 W, -4 A, 750 hFE

The is a 4A PNP medium-power Darlington Transistor can be used as output device in complementary general-purpose amplifier applications.

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Monolithic construction

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Complementary with BD679

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Equivalent to MJE 702

得捷:
TRANS PNP DARL 80V 4A TO126

立创商城:
BD680AG

e络盟:
ON SEMICONDUCTOR  BD680AG  达林顿晶体管, PNP, -80V, TO-225

艾睿:
If you require a higher current gain value in your circuit, then the PNP BD680AG Darlington transistor, developed by ON Semiconductor, is for you. This Darlington transistor array&s;s maximum emitter base voltage is 5 V. This product&s;s maximum continuous DC collector current is 4 A, while its minimum DC current gain is 750@2A@3 V. It has a maximum collector emitter saturation voltage of 2.8@40mA@2A V. Its maximum power dissipation is 40000 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans Darlington PNP 80V 4A 40000mW 3-Pin3+Tab TO-225 Box

TME:
Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; TO225

Verical:
Trans Darlington PNP 80V 4A 40000mW 3-Pin3+Tab TO-225 Box

Newark:
# ON SEMICONDUCTOR  BD680AG  Bipolar BJT Single Transistor, Darlington, PNP, 80 V, 1 MHz, 40 W, -4 A, 750 hFE

Win Source:
TRANS PNP DARL 80V 4A TO225