INFINEON BFP840FESDH6327XTSA1 晶体管 双极-射频, NPN, 2.25 V, 85 GHz, 75 mW, 35 mA, 150 hFE
RF NPN 2.6V 35mA 85GHz 75mW 表面贴装型 PG-TSFP-4-1
欧时:
RF Transistor 6GHz LowNoise SiGe SOT-343
得捷:
RF TRANS NPN 2.6V 85GHZ 4TSFP
贸泽:
射频RF双极晶体管 RF BIP TRANSISTORS
e络盟:
晶体管 双极-射频, NPN, 2.25 V, 85 GHz, 75 mW, 35 mA, 150 hFE
艾睿:
Operating at higher RF frequencies has never been easier with this specially designed BFP840FESDH6327XTSA1 RF amplifier from Infineon Technologies. This RF transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT NPN 2.25V 0.035A 4-Pin TSFP T/R
Chip1Stop:
Trans RF BJT 2.25V 0.035A Automotive 4-Pin TSFP T/R
Verical:
Trans RF BJT 2.25V 0.035A Automotive 4-Pin TSFP T/R
针脚数 4
极性 NPN
耗散功率 75 mW
输入电容 0.37 pF
击穿电压集电极-发射极 2.6 V
增益 35 dB
最小电流放大倍数hFE 150 @10mA, 1.8V
额定功率Max 75 mW
直流电流增益hFE 150
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 75 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-343
封装 SOT-343
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 电源管理, 工业, 3G/4G UMTS/LTE mobile phone applications, ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications, 无线, Wireless, Multimedia appl, Power Management, Satellite communication systems: Navigation systems GPS, Glonass, satellite radio SDARs, DAB
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
