INFINEON BFR840L3RHESDE6327XTSA1 晶体管 双极-射频, NPN, 2.25 V, 75 GHz, 75 mW, 35 mA, 150 hFE
RF NPN 2.6V 35mA 75GHz 75mW 表面贴装型 PG-TSLP-3
得捷:
RF TRANS NPN 2.6V 75GHZ TSLP-3
欧时:
INFINEON RF BIP TRANSISTOR BFR840L3RHESD
e络盟:
晶体管 双极-射频, NPN, 2.25 V, 75 GHz, 75 mW, 35 mA, 150 hFE
艾睿:
Look no further than the BFR840L3RHESDE6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This RF transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT 2.25V 0.035A 3-Pin TSLP T/R
Chip1Stop:
Trans RF BJT 2.25V 0.035A T/R
Newark:
# INFINEON BFR840L3RHESDE6327XTSA1 Bipolar - RF Transistor, NPN, 2.25 V, 75 GHz, 75 mW, 35 mA, 150
Win Source:
RF TRANS NPN 2.6V 75GHZ TSLP-3 / RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mount PG-TSLP-3
针脚数 3
极性 NPN
耗散功率 75 mW
输入电容 0.34 pF
击穿电压集电极-发射极 2.6 V
增益 27 dB
最小电流放大倍数hFE 150 @10mA, 1.8V
额定功率Max 75 mW
直流电流增益hFE 150
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 75 mW
安装方式 Surface Mount
引脚数 3
封装 PG-TSLP-3
封装 PG-TSLP-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Ku-band LNB front-end 2nd stage or 3rd stage LNA and active mixer, Ka-band oscillators DROs, and C-band LNB 1st and 2nd , Mobile and fixed connectivity applications: WLAN 802.11, WiMAX and UWB, Satellite communication systems: satellite radio SDARs, DAB, navigation systems e.g. GPS, Glonass
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99