INFINEON BSS159NH6906XTSA1 晶体管, MOSFET, N沟道, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V
SIPMOS® N 通道 MOSFET
得捷:
MOSFET N-CH 60V 230MA SOT23-3
欧时:
Infineon SIPMOS 系列 Si N沟道 MOSFET BSS159NH6906XTSA1, 130 mA, Vds=60 V, 3引脚 SOT-23封装
e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 230 mA, 1.7 ohm, SOT-23, 表面安装
艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSS159NH6906XTSA1 power MOSFET is for you. Its maximum power dissipation is 360 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes sipmos technology. This N channel MOSFET transistor operates in depletion mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 60V 0.23A 3-Pin SOT-23 T/R
Chip1Stop:
Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R
Verical:
Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R
Newark:
# INFINEON BSS159NH6906XTSA1 MOSFET Transistor, N Channel, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V
Win Source:
MOSFET N-CH 60V 230MA SOT23
针脚数 3
漏源极电阻 1.7 Ω
极性 N-Channel
耗散功率 360 mW
阈值电压 2.8 V
漏源极电压Vds 60 V
连续漏极电流Ids 0.23A
上升时间 2.9 ns
输入电容Ciss 33pF @25VVds
下降时间 9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 360 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 1 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 车用, Communications & Networking, 电源管理, Power Management, 通信与网络, Automotive, 消费电子产品, Consumer Electronics
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BSS159NH6906XTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BSS159N E6327 英飞凌 | 类似代替 | BSS159NH6906XTSA1和BSS159N E6327的区别 |