STMICROELECTRONICS BUL128D-B 单晶体管 双极, NPN, 400 V, 70 W, 4 A, 12 hFE
高电压,STMicroelectronics
欧时:
### 高电压晶体管,STMicroelectronics### 双极晶体管,STMicroelectronicsSTMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
得捷:
TRANS NPN 400V 4A TO220
e络盟:
单晶体管 双极, NPN, 400 V, 70 W, 4 A, 12 hFE
艾睿:
Thanks to STMicroelectronics, your circuit can handle high levels of voltage using the NPN BUL128D-B general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 9 V. Its maximum power dissipation is 70000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
安富利:
Trans GP BJT NPN 400V 4A 3-Pin3+Tab TO-220 Tube
Chip1Stop:
Trans GP BJT NPN 400V 4A 3-Pin3+Tab TO-220 Tube
Win Source:
TRANS NPN 400V 4A TO-220
针脚数 3
极性 NPN
耗散功率 70 W
击穿电压集电极-发射极 400 V
集电极最大允许电流 4A
最小电流放大倍数hFE 12 @2A, 5V
额定功率Max 70 W
直流电流增益hFE 12
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 70000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 9.15 mm
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Lighting, Power Management, 照明, 工业, Industrial, Signal Processing, 信号处理, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BUL128D-B ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
BUL381D 意法半导体 | 类似代替 | BUL128D-B和BUL381D的区别 |
BUL89 意法半导体 | 类似代替 | BUL128D-B和BUL89的区别 |
BUL138 意法半导体 | 类似代替 | BUL128D-B和BUL138的区别 |