PNP 复合晶体管,STMicroelectronics ### 双极晶体管,STMicroelectronicsSTMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
PNP 复合,STMicroelectronics
### 双极晶体管,STMicroelectronics
STMicroelectronics 的各种 NPN 和 PNP ,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
得捷:
TRANS PNP DARL 80V 4A SOT32-3
欧时:
### PNP 复合晶体管,STMicroelectronics![http://china.rs-online.com/largeimages/LBIPOLAR-23.gif]http://china.rs-online.com/largeimages/LBIPOLAR-23.gif ### 双极晶体管,STMicroelectronicsSTMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
立创商城:
BD680
e络盟:
单晶体管 双极, 达林顿, PNP, 60 V, 40 W, 4 A, 750 hFE
艾睿:
Are you looking for an amplified current signal in your circuit? The PNP BD680 Darlington transistor from STMicroelectronics yields a much higher gain than other transistors. This product&s;s maximum continuous DC collector current is 4 A, while its minimum DC current gain is 750@1.5A@3 V. It has a maximum collector emitter saturation voltage of 2.5@30mA@1.5A V. This Darlington transistor array&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
安富利:
Trans Darlington PNP 80V 4A 3-Pin3+Tab SOT-32 Tube
富昌:
BD6xxx 系列 80 V 4 A PNP互补功率达林顿晶体管 - SOT-32
Chip1Stop:
Trans Darlington PNP 80V 4A 3-Pin3+Tab SOT-32 Tube
TME:
Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; SOT32
Verical:
Trans Darlington PNP 80V 4A 40000mW 3-Pin3+Tab SOT-32 Tube
Newark:
# STMICROELECTRONICS BD680 Bipolar BJT Single Transistor, Darlington, PNP, 60 V, 40 W, 4 A, 750
儒卓力:
**PNP DARLINGTON 80V 4A 40W SOT32 **
Win Source:
TRANS PNP DARL 80V 4A SOT-32
DeviceMart:
TRANS DARL PNP 80V SOT-32
额定电压DC -80.0 V
额定电流 -4.00 A
针脚数 3
极性 PNP
耗散功率 40 W
击穿电压集电极-发射极 80 V
最小电流放大倍数hFE 750 @1.5A, 3V
额定功率Max 40 W
直流电流增益hFE 750
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 40000 mW
安装方式 Through Hole
引脚数 3
封装 TO-126-3
长度 7.8 mm
宽度 2.7 mm
高度 10.8 mm
封装 TO-126-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Industrial, 工业, Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BD680 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
2N6036G 安森美 | 功能相似 | BD680和2N6036G的区别 |
BD680G 安森美 | 功能相似 | BD680和BD680G的区别 |
MJE702G 安森美 | 功能相似 | BD680和MJE702G的区别 |