互补硅塑料功率晶体管80A ???? 100伏 Complementary Silicon Plastic Power Transistors 80â100 VOLTS
Do you require a transistor in your circuit operating in the high-voltage range? This PNP general purpose bipolar junction transistor, developed by , is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 40 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
频率 3 MHz
额定电压DC -80.0 V
额定电流 -3.00 A
极性 PNP
耗散功率 40 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 3A
最小电流放大倍数hFE 25 @1A, 4V
额定功率Max 40 W
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 40000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.28 mm
宽度 4.82 mm
高度 9.28 mm
封装 TO-220-3
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BD242BG ON Semiconductor 安森美 | 当前型号 | 当前型号 |
TIP32CG 安森美 | 类似代替 | BD242BG和TIP32CG的区别 |
TIP41CG 安森美 | 类似代替 | BD242BG和TIP41CG的区别 |
TIP127G 安森美 | 类似代替 | BD242BG和TIP127G的区别 |