INFINEON BSZ440N10NS3GATMA1 晶体管, MOSFET, N沟道, 18 A, 100 V, 0.038 ohm, 10 V, 2.7 V
OptiMOS™3 功率 MOSFET，100V 及以上
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ440N10NS3GATMA1, 18 A, Vds=100 V, 8引脚 TDSON封装
得捷:
MOSFET N-CH 100V 5.3A/18A TSDSON
立创商城:
N沟道 100V 18A 5.3A
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the BSZ440N10NS3GATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 29000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
TME:
Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Verical:
Trans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R
Newark:
# INFINEON BSZ440N10NS3GATMA1 MOSFET Transistor, N Channel, 18 A, 100 V, 0.038 ohm, 10 V, 2.7 V
额定功率 29 W
针脚数 8
漏源极电阻 0.038 Ω
极性 N-Channel
耗散功率 29 W
阈值电压 2.7 V
输入电容 480 pF
漏源极电压Vds 100 V
连续漏极电流Ids 5.3A
上升时间 1.8 ns
输入电容Ciss 480pF @50VVds
下降时间 2 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 29000 mW
安装方式 Surface Mount
引脚数 8
封装 PG-TSDSON
长度 3.4 mm
宽度 3.4 mm
高度 1.1 mm
封装 PG-TSDSON
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 工业, 车用, Isolated DC-DC converters telecom and datacom systems, Audio, Industrial, Uninterruptable power supplies UPS, Or-ing switches and circuit breakers in 48V systems, 电源管理, Class D audi, Power Management, Motor Drive & Control, Automotive, 电机驱动与控制, Synchronous rectification for AC-DC SMPS, 音频
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17