STMICROELECTRONICS BD238 单晶体管 双极, PNP, 80 V, 25 W, 2 A, 40 hFE
Bipolar BJT Transistor PNP 80V 2A 25W Through Hole SOT-32-3
得捷:
TRANS PNP 80V 2A SOT32-3
贸泽:
Bipolar Transistors - BJT PNP General Purpose
e络盟:
STMICROELECTRONICS BD238 单晶体管 双极, PNP, 80 V, 25 W, 2 A, 40 hFE
艾睿:
The three terminals of this PNP BD238 GP BJT from STMicroelectronics give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 25000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
安富利:
Trans GP BJT PNP 80V 2A 3-Pin3+Tab SOT-32
TME:
Transistor: bipolar, PNP; 100V; 2A; 25W; TO126
Verical:
Trans GP BJT PNP 80V 2A 25000mW 3-Pin3+Tab SOT-32 Tube
DeviceMart:
TRANSISTOR POWER PNP SOT-32
频率 3 MHz
额定电压DC -100 V
额定电流 -2.00 A
额定功率 25 W
针脚数 3
极性 PNP, P-Channel
耗散功率 25 W
增益频宽积 3 MHz
击穿电压集电极-发射极 80 V
最小电流放大倍数hFE 25 @1A, 2V
额定功率Max 25 W
直流电流增益hFE 40
工作温度Max 150 ℃
工作温度Min 65 ℃
耗散功率Max 25000 mW
安装方式 Through Hole
引脚数 3
封装 TO-126-3
长度 7.8 mm
宽度 2.7 mm
高度 10.8 mm
封装 TO-126-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BD238 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
MJE253G 安森美 | 功能相似 | BD238和MJE253G的区别 |
2N4920G 安森美 | 功能相似 | BD238和2N4920G的区别 |
2N4919G 安森美 | 功能相似 | BD238和2N4919G的区别 |