BSC080N03MSGATMA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC080N03MSGATMA1, 53 A, Vds=30 V, 8引脚 TDSON封装

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 30V 13A/53A TDSON

立创商城:
N沟道 30V 13A 53A

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC080N03MSGATMA1, 53 A, Vds=30 V, 8引脚 TDSON封装

e络盟:
功率场效应管, MOSFET, N沟道, 30 V, 53 A, 0.0067 ohm, PG-TDSON, 表面安装

艾睿:
As an alternative to traditional transistors, the BSC080N03MSGATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP

TME:
Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC080N03MSGATMA1  MOSFET Transistor, N Channel, 53 A, 30 V, 6.7 mohm, 10 V, 1 V

Win Source:
MOSFET N-CH 30V 53A TDSON-8