BSC110N06NS3GATMA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC110N06NS3GATMA1, 50 A, Vds=60 V, 8引脚 TDSON封装

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 60V 50A TDSON-8

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC110N06NS3GATMA1, 50 A, Vds=60 V, 8引脚 TDSON封装

立创商城:
N沟道 60V 50A

贸泽:
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3

艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the BSC110N06NS3GATMA1 power MOSFET. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.

安富利:
Trans MOSFET N-CH 60V 12A 8-Pin TDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC110N06NS3GATMA1  MOSFET Transistor, N Channel, 50 A, 60 V, 0.009 ohm, 10 V, 3 V

Win Source:
MOSFET N-CH 60V 50A TDSON-8