SOT-89 PNP 60V 0.5A
Thanks to Technologies" PNP Darlington transistor, you can easily amplify a current and output a much higher current gain value within your circuit. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 2000@10uA@1 V|4000@10mA@5V|10000@100mA@5V|2000@0.5A@5V. It has a maximum collector emitter saturation voltage of 1@0.1mA@100mA V. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.5@0.1mA@100mA V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 10 V.
极性 PNP
耗散功率 1 W
击穿电压集电极-发射极 60 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 10000 @100mA, 5V
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 200 MHz
耗散功率Max 1000 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89
高度 1.5 mm
封装 SOT-89
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCV48E6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BCV48,115 恩智浦 | 功能相似 | BCV48E6327HTSA1和BCV48,115的区别 |