晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 1 V
表面贴装型 N 通道 16A(Ta),80A(Tc) 2.5W(Ta),50W(Tc) PG-TDSON-8-5
得捷:
MOSFET N-CH 30V 16A/80A TDSON
e络盟:
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 1 V
艾睿:
Make an effective common source amplifier using this BSC050N03MSGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 30V 16A 8-Pin TDSON T/R
富昌:
N-沟道 30 V 80 A 5 mΩ 34 nC 表面贴装 OptiMOS 功率 Mosfet - TDSON-8
TME:
Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 30V 16A 8-Pin TDSON EP T/R
Win Source:
MOSFET N-CH 30V 80A TDSON-8
额定功率 50 W
针脚数 8
漏源极电阻 0.0042 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 1 V
漏源极电压Vds 30 V
连续漏极电流Ids 16A
上升时间 7.2 ns
输入电容Ciss 3600pF @15VVds
下降时间 7.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta, 50W Tc
安装方式 Surface Mount
引脚数 8
封装 PG-TDSON-8
封装 PG-TDSON-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Onboard charger, Mainboard, VRD/VRM
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99