BSZ100N06NSATMA1

晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0085 ohm, 10 V, 2.8 V

表面贴装型 N 通道 40A（Tc） 2.1W（Ta），36W（Tc） PG-TSDSON-8-FL

得捷:
MOSFET N-CH 60V 40A TSDSON

欧时:
Infineon MOSFET BSZ100N06NSATMA1

立创商城:
N沟道 60V 40A

贸泽:
MOSFET MV POWER MOS

e络盟:
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0085 ohm, 10 V, 2.8 V

艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; BSZ100N06NSATMA1 power MOSFET. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 60V 40A 8-Pin TSDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R