BDX53B

BDX53B图片1
BDX53B图片2
BDX53B图片3
BDX53B图片4
BDX53B图片5
BDX53B图片6
BDX53B图片7
BDX53B图片8
BDX53B图片9
BDX53B图片10
BDX53B图片11
BDX53B图片12
BDX53B图片13
BDX53B图片14
BDX53B图片15
BDX53B图片16
BDX53B图片17
BDX53B图片18
BDX53B图片19
BDX53B图片20
BDX53B图片21
BDX53B图片22
BDX53B图片23
BDX53B图片24
BDX53B概述

STMICROELECTRONICS  BDX53B  单晶体管 双极, 达林顿, NPN, 80 V, 60 W, 8 A, 750 hFE

NPN 复合,STMicroelectronics


欧时:
NPN 复合晶体管,STMicroelectronics### 双极晶体管,STMicroelectronicsSTMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。


得捷:
TRANS NPN DARL 80V 8A TO220


立创商城:
BDX53B


艾睿:
Increase the current gain in your circuit by using STMicroelectronics&s; NPN BDX53B Darlington transistor. This product&s;s maximum continuous DC collector current is 8 A, while its minimum DC current gain is 750@3A@3 V. It has a maximum collector emitter saturation voltage of 2@12mA@3A V. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2.5@12mA@3A V. Its maximum power dissipation is 60000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.


安富利:
Trans Darlington NPN 80V 8A 3-Pin3+Tab TO-220 Tube


Chip1Stop:
Trans Darlington NPN 80V 8A 3-Pin3+Tab TO-220 Tube


TME:
Transistor: NPN; bipolar; Darlington; 80V; 8A; 60W; TO220AB


Verical:
Trans Darlington NPN 80V 8A 60000mW 3-Pin3+Tab TO-220AB Tube


Newark:
Bipolar BJT Single Transistor, Darlington, NPN, 80 V, 60 W, 8 A, 750 hFE


儒卓力:
**NPN DARLINGTON 80V 8A TO220 **


Win Source:
TRANS NPN DARL 80V 8A TO-220


BDX53B中文资料参数规格
技术参数

针脚数 3

极性 NPN

耗散功率 60 W

击穿电压集电极-发射极 80 V

最小电流放大倍数hFE 750 @3A, 3V

额定功率Max 60 W

直流电流增益hFE 750

工作温度Max 150 ℃

工作温度Min -65 ℃

耗散功率Max 60000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

长度 10.4 mm

宽度 4.6 mm

高度 9.15 mm

封装 TO-220-3

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

制造应用 工业, Audio, Power Management, Industrial, Power Management, Audio, Industrial, 音频, 电源管理

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

海关信息

ECCN代码 EAR99

数据手册

BDX53B引脚图与封装图
BDX53B引脚图
BDX53B封装图
BDX53B封装焊盘图
在线购买BDX53B
型号: BDX53B
描述:STMICROELECTRONICS  BDX53B  单晶体管 双极, 达林顿, NPN, 80 V, 60 W, 8 A, 750 hFE
替代型号BDX53B
型号/品牌 代替类型 替代型号对比

BDX53B

ST Microelectronics 意法半导体

当前型号

当前型号

BDX53BTU

飞兆/仙童

类似代替

BDX53B和BDX53BTU的区别

BDX53CG

安森美

功能相似

BDX53B和BDX53CG的区别

TIP101G

安森美

功能相似

BDX53B和TIP101G的区别

锐单商城 - 一站式电子元器件采购平台