N-CH 25V 22A
Description:
With the new OptiMOS™ 25V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.
Available in halfbridge configuration power stage 5x6
Benefits:
额定功率 28 W
通道数 1
漏源极电阻 3.5 mΩ
极性 N-CH
耗散功率 2.2W Ta, 28W Tc
漏源极电压Vds 25 V
漏源击穿电压 25 V
连续漏极电流Ids 22A
上升时间 3.2 ns
输入电容Ciss 1862pF @12VVds
下降时间 2.2 ns
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 2.2W Ta, 28W Tc
安装方式 Surface Mount
封装 MG-WDSON-2
长度 6.35 mm
宽度 5.05 mm
高度 0.7 mm
封装 MG-WDSON-2
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Onboard charger, Mainboard, VRD/VRM
RoHS标准 RoHS Compliant
含铅标准 无铅