BSC030N03MSGATMA1

INFINEON  BSC030N03MSGATMA1  晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0025 ohm, 10 V, 2 V

表面贴装型 N 通道 21A（Ta），100A（Tc） 2.5W（Ta），69W（Tc） PG-TDSON-8-1

得捷:
MOSFET N-CH 30V 21A/100A TDSON

艾睿:
This BSC030N03MSGATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 30V 21A 8-Pin TDSON T/R

Chip1Stop:
Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC030N03MSGATMA1  MOSFET Transistor, N Channel, 100 A, 30 V, 0.0025 ohm, 10 V, 2 V

Win Source:
MOSFET N-CH 30V 100A TDSON-8