BSZ068N06NSATMA1

晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0056 ohm, 10 V, 2.8 V

表面贴装型 N 通道 40A（Tc） 2.1W（Ta），46W（Tc） PG-TSDSON-8-FL

得捷:
MOSFET N-CH 60V 40A TSDSON

欧时:
Infineon MOSFET BSZ068N06NSATMA1

立创商城:
N沟道 60V 40A

贸泽:
MOSFET MV POWER MOS

e络盟:
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0056 ohm, 10 V, 2.8 V

艾睿:
As an alternative to traditional transistors, the BSZ068N06NSATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 60V 40A 8-Pin TSDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 60V 63A 8-Pin TSDSON EP T/R