INFINEON BSC0902NSATMA1 晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0022 ohm, 10 V, 1.2 V
表面贴装型 N 通道 30 V 24A(Ta),100A(Tc) 2.5W(Ta),48W(Tc) PG-TDSON-8-6
欧时:
MOSFET OptiMOS 30V 100A 2.6mOhm TDSON8
得捷:
MOSFET N-CH 30V 24A/100A TDSON
贸泽:
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
e络盟:
功率场效应管, MOSFET, N沟道, 30 V, 100 A, 0.0022 ohm, SuperSOT, 表面安装
艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; BSC0902NSATMA1 power MOSFET. Its maximum power dissipation is 2500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 30V 24A 8-Pin TDSON T/R
Chip1Stop:
Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R
TME:
Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R
Newark:
# INFINEON BSC0902NSATMA1 MOSFET Transistor, N Channel, 100 A, 30 V, 0.0022 ohm, 10 V, 2 V
额定功率 48 W
针脚数 8
漏源极电阻 0.0022 Ω
极性 N-Channel
耗散功率 48 W
阈值电压 1.2 V
漏源极电压Vds 30 V
连续漏极电流Ids 24A
上升时间 5.2 ns
输入电容Ciss 1700pF @15VVds
下降时间 3.6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2500 mW
引脚数 8
封装 TDSON-8
长度 5.9 mm
宽度 5.15 mm
高度 1.27 mm
封装 TDSON-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, 工业, Mainboard, Industrial, VRD/VRM, Onboard charger, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BSC0902NSATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BSC077N12NS3G 英飞凌 | 完全替代 | BSC0902NSATMA1和BSC077N12NS3G的区别 |
BSC100N03MSGATMA1 英飞凌 | 功能相似 | BSC0902NSATMA1和BSC100N03MSGATMA1的区别 |
BSC050NE2LS 英飞凌 | 功能相似 | BSC0902NSATMA1和BSC050NE2LS的区别 |