BSC0902NSIATMA1

INFINEON  BSC0902NSIATMA1  晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0023 ohm, 10 V, 2 V

表面贴装型 N 通道 30 V 23A（Ta），100A（Tc） 2.5W（Ta），48W（Tc） PG-TDSON-8-6

欧时:
Infineon BSC0902NSIATMA1

得捷:
MOSFET N-CH 30V 23A/100A TDSON

艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; BSC0902NSIATMA1 power MOSFET. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC0902NSIATMA1  MOSFET Transistor, N Channel, 100 A, 30 V, 0.0023 ohm, 10 V, 2 V