BFP640FH6327XTSA1

晶体管 双极-射频, NPN, 4.1 V, 42 GHz, 200 mW, 50 mA, 110 hFE

Summary of Features:

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High gain low noise RF transistor

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 Provides outstanding performance for a wide range of wireless applications

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 Ideal for CDMA and WLAN applications

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 Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz

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High maximum stable gain:Gms = 23 dB at 1.8 GHz

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Gold metallization for extra high reliability

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 70 GHz fT-Silicon Germanium technology

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Pb-free RoHS compliant package1

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Qualified according AEC Q101