INFINEON BSZ900N15NS3GATMA1 晶体管, MOSFET, N沟道, 13 A, 150 V, 0.074 ohm, 10 V, 3 V
OptiMOS™3 功率 MOSFET，100V 及以上
得捷:
MOSFET N-CH 150V 13A 8TSDSON
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ900N15NS3GATMA1, 13 A, Vds=150 V, 8引脚 TSDSON封装
贸泽:
MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
e络盟:
功率场效应管, MOSFET, N沟道, 150 V, 13 A, 0.074 ohm, TSDSON, 表面安装
艾睿:
Make an effective common gate amplifier using this BSZ900N15NS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 38000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 150V 13A 8-Pin TSDSON T/R
TME:
Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Verical:
Trans MOSFET N-CH 150V 13A Automotive 8-Pin TSDSON EP T/R
Newark:
# INFINEON BSZ900N15NS3GATMA1 MOSFET Transistor, N Channel, 13 A, 150 V, 0.074 ohm, 10 V, 3 V
额定功率 38 W
通道数 1
针脚数 8
漏源极电阻 0.074 Ω
极性 N-Channel
耗散功率 38 W
阈值电压 3 V
漏源极电压Vds 150 V
漏源击穿电压 150 V
连续漏极电流Ids 13A
上升时间 4 ns
输入电容Ciss 380pF @75VVds
下降时间 3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 38 W
安装方式 Surface Mount
引脚数 8
封装 TSDSON-8
长度 3.3 mm
宽度 3.3 mm
高度 1.1 mm
封装 TSDSON-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 车用, Class D audio amplifiers, Audio, Or-ing switches and circuit breakers in 48V systems, Communications & Networking, 电源管理, Power Management, 通信与网络, Automotive, Motor Drive & Control, 电机驱动与控制, Isolated DC-DC converters telecom and datacom systems, Synchronous rectification for AC-DC SMPS, 音频
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17