BDX54B

STMICROELECTRONICS  BDX54B  单晶体管 双极, 达林顿, PNP, 80 V, 60 W, 8 A, 750 hFE

Description

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Features

■ Good hFE linearity

■ High fT frequency

■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode

Application

■ Audio amplifiers

■ Linear and switching industrial equipment

得捷:
TRANS PNP DARL 80V 8A TO220

贸泽:
Darlington Transistors PNP Power Darlington

e络盟:
STMICROELECTRONICS  BDX54B  单晶体管 双极, 达林顿, PNP, 80 V, 60 W, 8 A, 750 hFE

艾睿:
Higher current yields within your circuit is what you will get with STMicroelectronics&s; PNP BDX54B Darlington transistor. This product&s;s maximum continuous DC collector current is 8 A, while its minimum DC current gain is 750@3A@3 V. It has a maximum collector emitter saturation voltage of 2@12mA@3A V. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2.5@12mA@3A V. Its maximum power dissipation is 60000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.

富昌:
BDX53/4 系列 80 V 8 A 通孔 NPN功率达林顿晶体管-TO-221

Chip1Stop:
Trans Darlington PNP 80V 8A 3-Pin3+Tab TO-220 Tube

Verical:
Trans Darlington PNP 80V 8A 60000mW 3-Pin3+Tab TO-220AB Tube

Win Source:
TRANS PNP DARL 80V 8A TO-220