INFINEON BSC160N10NS3GATMA1 晶体管, MOSFET, N沟道, 42 A, 100 V, 0.0139 ohm, 10 V, 2.7 V
OptiMOS™3 功率 MOSFET，100V 及以上
得捷:
MOSFET N-CH 100V 8.8A/42A TDSON
立创商城:
N沟道 100V 8.8A 42A
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC160N10NS3GATMA1, 42 A, Vds=100 V, 8引脚 TDSON封装
艾睿:
Make an effective common gate amplifier using this BSC160N10NS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 60000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
安富利:
Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON T/R
Chip1Stop:
Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON EP T/R
TME:
Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R
Win Source:
MOSFET N-CH 100V 42A TDSON-8
额定功率 60 W
针脚数 8
漏源极电阻 0.0139 Ω
极性 N-Channel
耗散功率 60 W
阈值电压 2.7 V
输入电容 1300 pF
漏源极电压Vds 100 V
连续漏极电流Ids 8.8A
上升时间 15 ns
输入电容Ciss 1300pF @50VVds
下降时间 5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 60W Tc
安装方式 Surface Mount
引脚数 8
封装 PG-TDSON-8
长度 5.35 mm
宽度 6.35 mm
高度 1.1 mm
封装 PG-TDSON-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 车用, 电源管理, 工业, Synchronous rectification for AC-DC SMPS, Isolated DC-DC converters telecom and datacom systems, Audio, 电机驱动与控制, Uninterruptable power supplies UPS, Automotive, Or-ing switches and circuit breakers in 48V systems, Motor Drive & Control, Class D audi, 音频, Power Management
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BSC160N10NS3GATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BSC152N10NSFGATMA1 英飞凌 | 类似代替 | BSC160N10NS3GATMA1和BSC152N10NSFGATMA1的区别 |
FDMS3662 飞兆/仙童 | 功能相似 | BSC160N10NS3GATMA1和FDMS3662的区别 |
BSC152N10NSFG 英飞凌 | 功能相似 | BSC160N10NS3GATMA1和BSC152N10NSFG的区别 |