BD535

互补功率晶体管 Complementary power transistors

Description

The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD534 and BD536.

Features

■ BD533, , and BD537 are NPN transistors

得捷:
TRANS NPN 60V 8A TO220

贸泽:
Bipolar Transistors - BJT NPN Medium Power

艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This NPN BD535 general purpose bipolar junction transistor, developed by STMicroelectronics, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 50000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans GP BJT NPN 60V 8A 3-Pin3+Tab TO-220 Tube

Chip1Stop:
Trans GP BJT NPN 60V 8A 3-Pin3+Tab TO-220 Tube

Win Source:
TRANS NPN 60V 8A TO-220