INFINEON BSC130P03LSGAUMA1 晶体管 双极预偏置/数字, BRT, TDSON
OptiMOS™P P 通道功率 MOSFET
**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能,以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括:直流-直流、电动机控制、汽车和 eMobility。
增强型模式
雪崩等级
低切换和传导功率损耗
无铅引线电镀;符合 RoHS 标准
标准封装
OptiMOS™ P 通道系列:温度范围为 -55°C 至 +175°C
欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET BSC130P03LSGAUMA1, 22.5 A, Vds=30 V, 8引脚 TDSON封装
得捷:
MOSFET P-CH 30V 12A/22.5A TDSON
e络盟:
晶体管, MOSFET, BRT, P沟道, -22.5 A, -30 V, 0.0094 ohm, -10 V, -1.5 V
艾睿:
Compared to traditional transistors, BSC130P03LSGAUMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
TME:
Transistor: P-MOSFET; unipolar; -30V; -22.5A; 69W; PG-TDSON-8
Verical:
Trans MOSFET P-CH 30V 12A Automotive 8-Pin TDSON EP T/R
Newark:
# INFINEON BSC130P03LSGAUMA1 Bipolar Pre-Biased / Digital Transistor, BRT, TDSON
额定功率 69 W
针脚数 8
漏源极电阻 0.0094 Ω
极性 P-Channel
耗散功率 2.5 W
漏源极电压Vds 30 V
连续漏极电流Ids 12A
上升时间 65.6 ns
输入电容Ciss 2760pF @15VVds
下降时间 35.1 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 69 W
安装方式 Surface Mount
引脚数 8
封装 TDSON
长度 6.1 mm
宽度 5.35 mm
高度 1.1 mm
封装 TDSON
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 电机驱动与控制, 电源管理, Consumer Electronics, 工业, 消费电子产品, Power Management, Onboard charger, Industrial, Motor Drive & Control
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17