INFINEON BSZ018NE2LSATMA1 晶体管, MOSFET, N沟道, 40 A, 25 V, 0.0015 ohm, 10 V, 2 V
The BSZ018NE2LS is a N-channel Power MOSFET with new OptiMOS™ 25V product family, sets new standards in power density and energy efficiency and system in package. Ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solution applications. Available in half bridge configuration. It minimizes EMI in the system making external snubber networks obsolete and the products easy to design-in.
额定功率 69 W
针脚数 8
漏源极电阻 0.0015 Ω
极性 N-Channel
耗散功率 69 W
阈值电压 2 V
漏源极电压Vds 25 V
连续漏极电流Ids 23A
上升时间 4.4 ns
输入电容Ciss 2800pF @12VVds
下降时间 3.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2100 mW
引脚数 8
封装 PG-TSDSON-8
封装 PG-TSDSON-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Mainboard, Onboard charger, 电机驱动与控制, 便携式器材, LED Lighting, Consumer Electronics, VRD/VRM, Portable Devices, 电源管理, Motor Drive & Control, 消费电子产品, 发光二极管照明
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17