BYQ28EB-100-E3/81

Diode Switching 100V 10A 3Pin2+Tab TO-263AB T/R

FEATURES

• Glass passivated chip junction

• Ultrafast recovery times

• Soft recovery characteristics

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package

• Solder dip 260 °C, 40 s for TO-220AB and ITO-220AB package

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

得捷:
DIODE ARRAY GP 100V 5A TO263AB

艾睿:
Diode Switching 100V 10A 3-Pin2+Tab TO-263AB T/R

安富利:
Diode Switching 100V 10A 3-Pin2+Tab TO-263AB T/R