BSB028N06NN3GXUMA1

INFINEON  BSB028N06NN3GXUMA1  晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0022 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSB028N06NN3GXUMA1, 90 A, Vds=60 V, 7引脚 WDSON封装

得捷:
MOSFET N-CH 60V 22A/90A 2WDSON

立创商城:
N沟道 60V 22A 90A

贸泽:
MOSFET MV POWER MOS

e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 90 A, 0.0022 ohm, WDSON, 表面安装

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSB028N06NN3GXUMA1 power MOSFET is for you. Its maximum power dissipation is 2200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -40 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

Chip1Stop:
Trans MOSFET N-CH 60V 22A 7-Pin WDSON

TME:
Transistor: N-MOSFET; unipolar; 60V; 90A; 78W; OptiMOS™ 3

Verical:
Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R

Newark:
MOSFET Transistor, N Channel, 90 A, 60 V, 0.0022 ohm, 10 V, 3 V

Win Source:
MOSFET N-CH 60V 22A/90A 2WDSON / N-Channel 60 V 22A Ta, 90A Tc 2.2W Ta, 78W Tc Surface Mount MG-WDSON-2, CanPAK M™