BSC0921NDIATMA1 编带
MOSFET - 阵列 2 N 沟道（双）非对称型 30V 17A，31A 1W 表面贴装型 PG-TISON-8
欧时:
Infineon MOSFET BSC0921NDI
得捷:
MOSFET 2N-CH 30V 17A/31A TISON8
立创商城:
双N沟道配对 30V 31A 17A
e络盟:
双路场效应管, MOSFET, N沟道, 30 V, 40 A, 3.9 ohm, TISON, 表面安装
艾睿:
Use Infineon Technologies&s; BSC0921NDIATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
Chip1Stop:
Trans MOSFET N-CH 30V 17A/31A 8-Pin TISON EP T/R
TME:
Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; PG-TISON-8
Verical:
Trans MOSFET N-CH 30V 17A/31A 8-Pin TISON EP T/R
额定功率 2.5 W
通道数 1
针脚数 8
漏源极电阻 3.9 Ω
极性 N-CH
耗散功率 2.5 W
阈值电压 2 V
漏源极电压Vds 30 V
漏源击穿电压 ±30 V
连续漏极电流Ids 17A/31A
输入电容Ciss 1025pF @15VVds
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2500 mW
安装方式 Surface Mount
引脚数 8
封装 PG-TISON-8
封装 PG-TISON-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Onboard charger, VRD/VRM, Mainboard
RoHS标准
含铅标准 Lead Free