INFINEON BSC900N20NS3GATMA1 晶体管, MOSFET, N沟道, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V
OptiMOS™3 功率 MOSFET,100V 及以上
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC900N20NS3GATMA1, 15.2 A, Vds=200 V, 8引脚 TDSON封装
得捷:
MOSFET N-CH 200V 15.2A TDSON-8
贸泽:
MOSFET MV POWER MOS
艾睿:
As an alternative to traditional transistors, the BSC900N20NS3GATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 62500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON T/R
TME:
Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP T/R
Newark:
# INFINEON BSC900N20NS3GATMA1 MOSFET Transistor, N Channel, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V
额定功率 62.5 W
针脚数 8
漏源极电阻 0.077 Ω
极性 N-Channel
耗散功率 62.5 W
阈值电压 3 V
漏源极电压Vds 200 V
连续漏极电流Ids 15.2A
上升时间 4 ns
输入电容Ciss 690pF @100VVds
下降时间 3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 62.5 W
安装方式 Surface Mount
引脚数 8
封装 PG-TDSON-8
长度 6.1 mm
宽度 5.35 mm
高度 1.1 mm
封装 PG-TDSON-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Synchronous rectification for AC-DC SMPS, 工业, Industrial, 音频, 电机驱动与控制, Class D audio amplifiers, LED Lighting, Isolated DC-DC converters, Audio, 电源管理, Motor Drive & Control, 发光二极管照明
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17