双向 58V
121V Clamp 33A 8/20µs Ipp Tvs Diode Through Hole DO-15
得捷:
TVS DIODE 58.1VWM 121VC DO15
立创商城:
双向 Vrwm:58.1V 600W
艾睿:
Save yourself hassle by equipping your device with STMicroelectronics&s; BZW06-58BRL TVS diode which will react to sudden or momentary overvoltage conditions. Its maximum leakage current is 1 μA. Its peak pulse power dissipation is 600 W. Its test current is 1 mA. This device&s;s maximum clamping voltage is 121 V and minimum breakdown voltage is 64.6 V. This TVS diode has a minimum operating temperature of -65 °C and a maximum of 175 °C. This product will be shipped in tape and reel packaging so that components can be mounted effectively.
安富利:
Diode TVS Single Bi-Dir 58.1V 600W 2-Pin DO-15 T/R
Chip1Stop:
Diode TVS Single Bi-Dir 58.1V 600W 2-Pin DO-15 T/R
Verical:
TVS Diode Single Bi-Dir 58.1V 600W 2-Pin DO-15 T/R
儒卓力:
**TRANSIL BI 0,6KW 68V DO15 **
额定电压DC 58.0 V
额定功率 600 W
钳位电压 121 V
最大反向电压(Vrrm) 58.1V
测试电流 1 mA
脉冲峰值功率 600 W
最小反向击穿电压 64.6 V
击穿电压 64.6 V
工作温度Max 175 ℃
工作温度Min -65 ℃
工作结温 175 ℃
安装方式 Through Hole
引脚数 2
封装 DO-15
长度 6.75 mm
直径 3.53 mm
封装 DO-15
工作温度 -65℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 通用
RoHS标准
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BZW06-58BRL ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
BZW06-58B 意法半导体 | 完全替代 | BZW06-58BRL和BZW06-58B的区别 |
P6SMB22CAT3G 安森美 | 功能相似 | BZW06-58BRL和P6SMB22CAT3G的区别 |
P6KE68CA 飞兆/仙童 | 功能相似 | BZW06-58BRL和P6KE68CA的区别 |