BD910

STMICROELECTRONICS  BD910  单晶体管 双极, PNP, 80 V, 3 MHz, 90 W, -10 A, 40 hFE

Bipolar BJT Transistor PNP 80 V 15 A 3MHz 90 W Through Hole TO-220

得捷:
TRANS PNP 80V 15A TO220

e络盟:
单晶体管 双极, PNP, 80 V, 3 MHz, 90 W, -10 A, 40 hFE

艾睿:
This PNP BD910 general purpose bipolar junction transistor from STMicroelectronics is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 90000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

Chip1Stop:
Trans GP BJT PNP 80V 15A 3-Pin3+Tab TO-220 Tube

Win Source:
TRANS PNP 80V 15A TO-220