BSB056N10NN3GXUMA1

Infineon OptiMOS 系列 Si N沟道 MOSFET BSB056N10NN3GXUMA1, 83 A, Vds=100 V, 7引脚 WDSON封装

OptiMOS™ 功率 MOSFET 系列

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色封装（无铅）

超低 Rdson

得捷:
MOSFET N-CH 100V 9A/83A 2WDSON

立创商城:
N沟道 100V 83A 9A

欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET BSB056N10NN3GXUMA1, 83 A, Vds=100 V, 7引脚 WDSON封装

贸泽:
MOSFET MV POWER MOS

e络盟:
INFINEON  BSB056N10NN3GXUMA1  晶体管, MOSFET, N沟道, 83 A, 100 V, 0.005 ohm, 10 V, 2.7 V

艾睿:
This BSB056N10NN3GXUMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2800 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R

TME:
Transistor: N-MOSFET; unipolar; 100V; 52A; 78W

Verical:
Trans MOSFET N-CH 100V 9A Automotive 7-Pin WDSON T/R

Win Source:
MOSFET N-CH 100V 9A/83A 2WDSON / N-Channel 100 V 9A Ta, 83A Tc 2.8W Ta, 78W Tc Surface Mount MG-WDSON-2, CanPAK M™