ON SEMICONDUCTOR BUH150G 双极晶体管
This NPN general purpose bipolar junction transistor from is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 10 V. Its maximum power dissipation is 150000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 10 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
频率 23 MHz
额定电压DC 700 V
额定电流 15.0 A
针脚数 3
极性 NPN
耗散功率 150 W
击穿电压集电极-发射极 700 V
集电极最大允许电流 15A
最小电流放大倍数hFE 8 @10A, 5V
额定功率Max 150 W
直流电流增益hFE 22
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 150000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.28 mm
宽度 4.82 mm
高度 9.28 mm
封装 TO-220-3
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BUH150G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BUL510 意法半导体 | 功能相似 | BUH150G和BUL510的区别 |