NXP BSH103,215 晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
The BSH103 from is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH103 is designed and qualified for use in high frequency applications, glue logic interface between logic blocks or periphery, computing, battery powered applications.
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- Suitable for use with all 5V logic families
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- Suitable for very low gate drive sources
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- Drain to source voltage Vds of 30V
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- Gate to source voltage of ±8V
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- Drain current Id of 850mA
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- Power dissipation Pd of 750mW
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- Operating junction temperature range from -55°C to 150°C
通道数 1
针脚数 3
漏源极电阻 0.4 Ω
极性 N-Channel
耗散功率 750 mW
阈值电压 400 mV
漏源极电压Vds 30 V
连续漏极电流Ids 850 mA
上升时间 3.5 ns
输入电容Ciss 83pF @24VVds
额定功率Max 540 mW
下降时间 7 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 540mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 3 mm
宽度 1.4 mm
高度 1 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 便携式器材, Consumer Electronics, Power Management, 电源管理, 消费电子产品, 工业, Industrial, Portable Devices
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BSH103,215 NXP 恩智浦 | 当前型号 | 当前型号 |
BSH103,235 恩智浦 | 类似代替 | BSH103,215和BSH103,235的区别 |
MMBF0201NLT1G 安森美 | 功能相似 | BSH103,215和MMBF0201NLT1G的区别 |
FDV303N 飞兆/仙童 | 功能相似 | BSH103,215和FDV303N的区别 |