BSH114,215

N 通道 MOSFET，高达 0.9A，NXP Semiconductors### MOSFET 晶体管，NXP Semiconductors

The is a 100V N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS™1 technology. Low on resistance and fast switching performance makes this device suitable for use in relays and DC to DC converters applications.

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150°C Junction temperature

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Low conduction losses

得捷:
MOSFET N-CH 100V 500MA SOT23

艾睿:
Trans MOSFET N-CH 100V 0.85A 3-Pin TO-236AB T/R

安富利:
Trans MOSFET N-CH 100V 0.85A 3-Pin TO-236AB T/R

富昌:
BSH 系列 100 V 0.5 Ω 0.83 W N-沟道 增强型 晶体管 - SOT-23

Chip1Stop:
Trans MOSFET N-CH 100V 0.85A 3-Pin TO-236AB T/R

Verical:
Trans MOSFET N-CH 100V 0.85A 3-Pin TO-236AB T/R

Newark:
# NXP  BSH114,215  MOSFET Transistor, N Channel, 850 mA, 100 V, 0.4 ohm, 10 V, 3 V

Win Source:
MOSFET N-CH 100V 500MA SOT23