NXP BF991 晶体管, 射频FET, 20 V, 20 mA, 200 mW, SOT-143B
The is a 20V N-channel depletion mode Dual Gate MOSFET protected against excessive input voltage surges by integrated back to back diodes between gate and source. Used in VHF television tuners and FM tuners applications.
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- Interconnected source and substrate
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- 150°C Junction temperature
Chip1Stop:
Trans RF MOSFET N-CH 20V 0.02A 4-Pin3+Tab SOT-143B
Newark:
# NXP BF991 RF FET Transistor, 20 V, 20 mA, 200 mW, SOT-143B
针脚数 4
极性 N-Channel
耗散功率 200 mW
漏源极电压Vds 20 V
连续漏极电流Ids 20.0 mA
工作温度Max 150 ℃
工作温度Min -65 ℃
工作结温Max 150 ℃
安装方式 Surface Mount
引脚数 4
封装 SOT-143
封装 SOT-143
工作温度 -65℃ ~ 150℃
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 Consumer Electronics, 射频通信, 消费电子产品, Communications & Networking, 通信与网络, RF Communications
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BF991 NXP 恩智浦 | 当前型号 | 当前型号 |
BF991,215 恩智浦 | 完全替代 | BF991和BF991,215的区别 |
BF996S,215 恩智浦 | 完全替代 | BF991和BF996S,215的区别 |
BF998R,215 恩智浦 | 类似代替 | BF991和BF998R,215的区别 |