达林顿功率晶体管NPN硅 DARLINGTON POWER TRANSISTORS NPN SILICON
4.0 AMPERES POWER TRANSISTORS NPN SILICON 60, 80, 100 VOLTS, 40 WATTS
This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications.
Features
•High DC Current Gain:
hFE = 750 Min @ IC
= 1.5 and 2.0 Adc
•Monolithic Construction
•BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682
•BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
•Pb−Free Packages are Available额定电压DC 100 V
额定电流 4.00 A
极性 NPN
耗散功率 40000 mW
击穿电压集电极-发射极 100 V
集电极最大允许电流 4A
最小电流放大倍数hFE 750 @1.5A, 3V
额定功率Max 40 W
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 40000 mW
安装方式 Through Hole
引脚数 3
封装 TO-225-3
高度 11.04 mm
封装 TO-225-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Box
最小包装 500
RoHS标准 Non-Compliant
含铅标准 Contains Lead
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BD681 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BD681G 安森美 | 类似代替 | BD681和BD681G的区别 |
BD681STU 安森美 | 功能相似 | BD681和BD681STU的区别 |