BC858BWT1

通用晶体管（ PNP硅） General Purpose TransistorsPNP Silicon

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| −30V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −30V 集电极连续输出电流ICCollector CurrentIC| −100mA/-0.1A 截止频率fTTranstion FrequencyfT| 100MHz 直流电流增益hFEDC Current GainhFE| 220~475 管压降VCE（sat）Collector-Emitter SaturationVoltage| −650mV/-0.65V 耗散功率PcPoWer Dissipation| 150mW/0.15W Description & Applications| General purpose transistors PNP silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. 描述与应用| 通用PNP硅 这些晶体管是专为通用放大器应用。他们被安置在SOT-323/SC-70这是专为低功率表面贴装应用。