BQ4011YMA-70N

BQ4011YMA-70N图片1
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BQ4011YMA-70N概述

128Kx8非易失SRAM 128Kx8 Nonvolatile SRAM

GENERAL DESCRIPON

The CMOS bq4011/Y/LY is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the

unlimited write cycles of standard SRAM.

The control circuitry constantly monitors the single supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation.

FEATURES

• Data Retention for at least 10 Years Without Power

• Automatic Write-Protection During Power-up/Power-down Cycles

• Conventional SRAM Operation, Including Unlimited Write Cycles

• Internal Isolation of Battery before Power Application

• 5-V or 3.3-V Operation

• Industry Standard28-Pin DIP Pinout

BQ4011YMA-70N中文资料参数规格
技术参数

电源电压DC 5.00 V

存取时间 70.0 ns

内存容量 32000 B

存取时间Max 70 ns

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 4.5V ~ 5.5V

封装参数

安装方式 Through Hole

引脚数 28

封装 DIP-28

外形尺寸

封装 DIP-28

物理参数

工作温度 -40℃ ~ 85℃ TA

其他

产品生命周期 Obsolete

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

数据手册

BQ4011YMA-70N引脚图与封装图
BQ4011YMA-70N引脚图
BQ4011YMA-70N封装图
BQ4011YMA-70N封装焊盘图
在线购买BQ4011YMA-70N
型号: BQ4011YMA-70N
制造商: TI 德州仪器
描述:128Kx8非易失SRAM 128Kx8 Nonvolatile SRAM
替代型号BQ4011YMA-70N
型号/品牌 代替类型 替代型号对比

BQ4011YMA-70N

TI 德州仪器

当前型号

当前型号

BQ4011YMA-70

德州仪器

类似代替

BQ4011YMA-70N和BQ4011YMA-70的区别

DS1230Y-70+

美信

功能相似

BQ4011YMA-70N和DS1230Y-70+的区别

DS1230AB-70+

美信

功能相似

BQ4011YMA-70N和DS1230AB-70+的区别

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