BSB056N10NN3 G概述
INFINEON BSB056N10NN3 G 晶体管, MOSFET, N沟道, 83 A, 100 V, 0.005 ohm, 10 V, 2.7 V
Summary of Features:
- .
- Excellent switching performance
- .
- World’s lowest R DSon
- .
- Very low Q g and Q gd
- .
- Excellent gate charge x R DSon product FOM
- .
- RoHS compliant-halogen free
- .
- MSL1 rated 2
Benefits:
- .
- Environmentally friendly
- .
- Increased efficiency
- .
- Highest power density
- .
- Less paralleling required
- .
- Smallest board-space consumption
- .
- Easy-to-design products
BSB056N10NN3 G中文资料参数规格
技术参数
针脚数 3
漏源极电阻 0.005 Ω
极性 N-Channel
耗散功率 2.8 W
阈值电压 2.7 V
漏源极电压Vds 100 V
输入电容Ciss 5500pF @50VVds
额定功率Max 78 W
工作温度Max 150 ℃
封装参数
安装方式 Surface Mount
引脚数 7
封装 WDSON-2
外形尺寸
长度 6.35 mm
宽度 5.05 mm
高度 0.7 mm
封装 WDSON-2
其他
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Synchronous rectification for AC-DC SMPS, Uninterruptable power supplies UPS, Isolated DC-DC converters telecom and datacom systems, Class D audio amplifiers, Or-ing switches and circuit breakers in 48V systems
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
海关信息
ECCN代码 EAR99
在线购买BSB056N10NN3 G
型号： BSB056N10NN3 G
制造商：
Infineon
英飞凌
描述：INFINEON BSB056N10NN3 G 晶体管, MOSFET, N沟道, 83 A, 100 V, 0.005 ohm, 10 V, 2.7 V