BUZ900D

SEMELAB  BUZ900D  晶体管, MOSFET, N沟道, 16 A, 160 V, 750 mohm, 1.5 V

The is a 160V N-channel Power MOSFET for audio applications. It features integral protection diode and enhancement mode.

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High speed switching

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Semefab designed and diffused

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High voltage

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High energy rating

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±14V Gate to source voltage

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16A Body drain diode current

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0.5°C/W Thermal resistance, junction to case