NXP BSS123,215 晶体管, MOSFET, N沟道, 150 mA, 100 V, 3.5 ohm, 10 V, 2 V
The BSS123 from is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line drivers, telephone ringer and relay drivers.
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- Drain to source voltage Vds of 100V
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- Gate to source voltage of ±20V
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- Continuous drain current Id of 150mA
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- Power dissipation Pd of 250mW
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- Operating junction temperature range from -55°C to 150°C
针脚数 3
漏源极电阻 3.5 Ω
极性 N-Channel
耗散功率 250 mW
阈值电压 2 V
漏源极电压Vds 100 V
连续漏极电流Ids 150 mA
输入电容Ciss 40pF @25VVds
额定功率Max 250 mW
工作温度Max 150 ℃
耗散功率Max 250mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 电源管理, 工业, Consumer Electronics, 消费电子产品, Power Management, Portable Devices, Communications & Networking, Computers & Computer Peripherals, Industrial, 便携式器材
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BSS123,215 NXP 恩智浦 | 当前型号 | 当前型号 |
BSS123LT1G 安森美 | 功能相似 | BSS123,215和BSS123LT1G的区别 |
BSS123-7-F 美台 | 功能相似 | BSS123,215和BSS123-7-F的区别 |
BSS123 飞兆/仙童 | 功能相似 | BSS123,215和BSS123的区别 |