BUK6C2R1-55C概述
NXP BUK6C2R1-55C 晶体管, MOSFET, N沟道, 228 A, 55 V, 0.0023 ohm, 10 V, 2.3 V
The is a N-channel enhancement-mode intermediate level gate drive FET in a plastic package using advanced TrenchMOS® technology. The device has been designed and qualified to the appropriate AEC-Q101 standard for use in high performance automotive applications.
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- High current handling capability up to 320A
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- Low conduction losses due to very low ON-state resistance
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- Suitable for standard and logic level gate drive sources
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- Suitable for thermally demanding environments due to 175°C rating
BUK6C2R1-55C中文资料参数规格
技术参数
针脚数 7
漏源极电阻 0.0023 Ω
极性 N-Channel
耗散功率 300 W
阈值电压 2.3 V
漏源极电压Vds 55 V
工作温度Max 175 ℃
封装参数
引脚数 7
封装 TO-263
外形尺寸
封装 TO-263
其他
产品生命周期 Unknown
制造应用 Automation & Process Control, Lighting, Automotive, Power Management, Motor Drive & Control, Industrial
符合标准
RoHS标准 Exempt
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
在线购买BUK6C2R1-55C
型号： BUK6C2R1-55C
制造商：
NXP
恩智浦
描述：NXP BUK6C2R1-55C 晶体管, MOSFET, N沟道, 228 A, 55 V, 0.0023 ohm, 10 V, 2.3 V