NXP BSP89,115 晶体管, MOSFET, N沟道, 340 mA, 240 V, 2.8 ohm, 10 V, 2 V
The is a N-channel enhancement-mode logic level FET in a plastic package using vertical D-MOS technology. It is intended for use as a surface-mount device in line current interrupters in telephone sets and for application in relay, high speed and line transformer drivers.
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- Direct interface to Complementary C-MOS transistor and Transistor-Transistor Logic TTL devices
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- Very fast switching
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- No secondary breakdown
通道数 1
针脚数 3
漏源极电阻 2.8 Ω
极性 N-Channel
耗散功率 1.5 W
阈值电压 2 V
漏源极电压Vds 240 V
连续漏极电流Ids 373 mA
输入电容Ciss 120pF @25VVds
额定功率Max 1.5 W
工作温度Max 150 ℃
耗散功率Max 1.5W Ta
安装方式 Surface Mount
引脚数 3
封装 TO-261-4
长度 6.7 mm
宽度 3.7 mm
高度 1.7 mm
封装 TO-261-4
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BSP89,115 NXP 恩智浦 | 当前型号 | 当前型号 |
BSP89 英飞凌 | 功能相似 | BSP89,115和BSP89的区别 |
ZVN4424G 威世 | 功能相似 | BSP89,115和ZVN4424G的区别 |