NXP BSP126,115 晶体管, MOSFET, N沟道, 300 mA, 250 V, 2.8 ohm, 10 V, 2 V
The is a N-channel enhancement-mode vertical D-MOS Transistor in a miniature package. It is suitable for use in line current interrupter in telephone sets, relay, high-speed and line transformer driver applications.
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- Direct interface to C-MOS, TTL
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- High-speed switching
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- No secondary breakdown
针脚数 3
漏源极电阻 2.8 Ω
极性 N-Channel
耗散功率 1.5 W
阈值电压 2 V
漏源极电压Vds 250 V
连续漏极电流Ids 375 mA
输入电容Ciss 120pF @25VVds
额定功率Max 1.5 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.5W Ta
安装方式 Surface Mount
引脚数 3
封装 TO-261-4
封装 TO-261-4
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Cut Tape CT
制造应用 Communications & Networking, Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BSP126,115 NXP 恩智浦 | 当前型号 | 当前型号 |
BSP126,135 恩智浦 | 类似代替 | BSP126,115和BSP126,135的区别 |
STN1HNK60 意法半导体 | 功能相似 | BSP126,115和STN1HNK60的区别 |